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A very basic protocol issue involves the manner in which the circuit is set up between devices. There are three alternatives: simplex, Half DupleX (HDX), and Full DupleX (FDX), as illustrated in Figure 6.11 and de ned below.

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Windows 2000 can be in uenced by Windows Server 2008 GP. To protect your environment, you need to continue to work with the older technologies, such as the System Policy Editor on Windows NT 4.0 (poledit.exe). Consider moving the older environments to Windows Server 2008 as soon as possible. Of course, this means upgrading to Windows Vista.

n = 0 , 1 , 2 , .. .

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6 36

(12.308)

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111 W Liu and M Chang, "Transistor Transient Studies Including Transcapacitive Current and Distributive Gate Resistance for Inverter Circuits," IEEE Trans Circ Syst (Part I: Fundamental Theory Appl) 45, 416-t22 (1998) 112 BSIM3 Manual, Dept Electrical Engi eering and Computer Science, Univ California, Berkeley, 1995 113 W Liu, R Gharpurey, M C Chang, U, Erdogan, R Aggarwal, and J P Mattia, "RF MOSFET Modeling Accounting for Distributed Substrate and Channel Resistances with Emphasis on the BSIM3v3 SPICE Model," IEEE Int Electron Device Meeting Digest, 1997, pp 309-312 114 M Shoji, "Analysis of High-Frequen;y Thermal Noise of Enhancement Mode MOS Field-Effect Transistors," IEEE Trans Electron Devices 13, 520-523 (1966) [The formula given in this chapter is modified from that of this reference because we include a factor (o)/IoT) 2 in the equation.

ISDN ITU ITU-T Ki Kc LAC LAI LOCREQ LU MAP MCC MIN MNC MOCH MS MSC MSCID MSIN MSISDN MSN MSRN PC_SSN PLMN PSTN PVLR RAND REGCANC REGNOT RF ROUTREQ SCCP SID SRES SSD_A SSD_B SSN SS7 SWID SWNO

In this paper, ,00 can be taken to be I and 4/2 can be taken to correspond to ocof this chapter 1, (not really defined in the paper) likely means the maximum current when transistor i, in saturation, while Io is the typical drain current expression Therefore, Io/0I can be takers to correspond to (1 _a 2 ) of this chapter The y parameters derived in this paper agree with those of Ref 107 (Appendix M) The coefficient n,2 appears different because this reference normalizes Ygg against gdo while Ref 107 normalizes y,, against coo The derivation of Rid and R1 is based on the NQS solution of the frequency response of the MOS transistor A simpler derivation leading to the same result is found in the next reference] 115 H Johnson, "Noise in Field-Effect Trinsistors," in J T Wallmark and H Johnson, eds.

, Field-Effect Transistors: Physics, Technology and Applications, Prentice-Hall, Englewood Cliffs, NJ, 1966 6 [The parameter q used in the reference is precisely (1-ct) of this chapter] 116 B Wang, J Hellums, and C Sodini, 'MOSFET Thermal Noise Modeling for Analog Integrated Circuits," IEEE J Solid-Stat' Circ 29, 833-835 (1994) (It seems that this derivation implicitly assumes that the velocity saturation occurs right when the device pinches off at the drain The fact that the velocity saturation occurs at some distance in front of drain does not seem to be considered) 117 D P Triantis, A N Birbas, and D Kondi,, "Thermal Noise Modeling for Short-Channel MOSFET's," IEEE Trans Electron Devices 43, 1950-1955 (1996) (It seems that this paper does not consider the linear region, but is concerned exclusively with transistors operating in saturation) 118 E M.

-150 6.8 6.9 7.0 7.1 7.2 7.3 7.4

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